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AFN3478W, AFN3478W-Alfa 200V N-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology General .
AFN3478W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN3478W, AFN3478W-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN3478W, AFN3478W-Alfa
Manufacturer
Alfa-MOS
File Size
557.67 KB
Datasheet
AFN3478W-Alfa-MOS.PDF
Description
200V N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN3478W, AFN3478W-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=1.5A,RDS(ON)=580mΩ@VGS=10V
* ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN3478W Distributors

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