AFN3478W, AFN3478W-Alfa Datasheet - Alfa-MOS

AFN3478W 200V N-Channel Enhancement Mode MOSFET

AFN3478W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN3478W Features

* ID=1.5A,RDS(ON)=580mΩ@VGS=10V

* ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-6L package design Application

* DC/DC Converters

* Load Switch

* LED Ba

AFN3478W-Alfa-MOS.PDF

AFN3478W Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN3478W, AFN3478W-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN3478W, AFN3478W-Alfa

Manufacturer:

Alfa-MOS

File Size:

557.67 KB

Description:

200v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3478W, AFN3478W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN3478W AFN3478W-Alfa 200V N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN3478W Distributor