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AO4900 - Dual N-Channel Enhancement Mode Field Effect Transistor

AO4900 Description

AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

AO4900 Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K D1 SOIC-8 A G1 S1 Absolute Maximum Ratings T A=25°C unless otherwise noted

AO4900 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, L

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Datasheet Details

Part number
AO4900
Manufacturer
Alpha & Omega Semiconductors
File Size
143.45 KB
Datasheet
AO4900_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO4900-like datasheet