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BLF6G20LS-180RN, BLF6G20-180RN - Power LDMOS transistor

Ampleon

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BLF6G20LS-180RN Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G20LS-180RN, BLF6G20-180RN. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	BLF6G20LS-180RN, BLF6G20-180RN
Manufacturer	Ampleon
File Size	1.09 MB
Description	Power LDMOS transistor
Datasheet	BLF6G20-180RN-Ampleon.pdf
Note	This datasheet PDF includes multiple part numbers: BLF6G20LS-180RN, BLF6G20-180RN. Please refer to the document for exact specifications by model.

BLF6G20LS-180RN Product details

Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:.
Average output power = 40 W.
Power gain = 17.2 dB.
Efficiency = 27 %.
IMD3 = 41 dBc.
ACPR = 38 dBc.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1800 MHz to 2000 MHz).
Internally matched for ease of use.

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Published: Jan 28, 2020 |