Description
BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descripti.
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Features
* Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:
* Average output power = 40 W
* Power gain = 17.2 dB
* Efficiency = 27 %
* IMD3 = 41 dBc
* ACPR = 38 dBc
* Easy power control
* Integrated
Applications
* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation
f
VDS PL(AV) Gp D IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier WCDMA
1930 to 1990 30 40
17.2 27
38[1]
ACPR (dBc) 41[1]