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BLP27M810 Power LDMOS transistor

BLP27M810 Description

BLP27M810 Power LDMOS transistor Rev.1 * 11 February 2016 Product data sheet 1.Product profile 1.1 General .
10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM) applications at frequencies from HF to 2700 MHz.

BLP27M810 Features

* High efficiency
* High power gain
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Designed for broadband operation (HF to 2700 MHz)
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applicat

BLP27M810 Applications

* at frequencies from HF to 2700 MHz. The BLP27M810 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package. Table 1. Typical performance RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C in a class-AB application circuit.

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Datasheet Details

Part number
BLP27M810
Manufacturer
Ampleon
File Size
428.73 KB
Datasheet
BLP27M810-Ampleon.pdf
Description
Power LDMOS transistor

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