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BLP7G07S-140P Power LDMOS transistor

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Description

BLP7G07S-140P Power LDMOS transistor Rev.5 * 8 January 2016 Product data sheet 1.Product profile 1.1 General .
140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

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Datasheet Specifications

Part number
BLP7G07S-140P
Manufacturer
Ampleon
File Size
339.82 KB
Datasheet
BLP7G07S-140P-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (700 MHz to 1000 MHz)
* Internally matched for ease of use
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substan

Applications

* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal f (MHz) 2-carrier W-CDMA 724 to 769 790 to 821 VDS PL(AV) (V) (W) 28 35 28 35 Gp (dB) 20.9 20.2 D (%) 29.6 29.0 ACPR5M (dBc) 36.3 [1] 35.5 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at

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