Datasheet4U Logo Datasheet4U.com

BLP7G07S-140P Datasheet - Ampleon

BLP7G07S-140P Power LDMOS transistor

140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal f (MHz) 2-carrier W-CDMA 724 to 769 790 to 821 VDS PL(AV) (V) (W) 28 35 28 35 Gp (dB) 20.9 20.2 D (%) 29.6 29.0 ACPR5M (dBc) 36.3 [1] 35.5 [1] [.

BLP7G07S-140P Features

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (700 MHz to 1000 MHz)

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substan

BLP7G07S-140P Datasheet (339.82 KB)

Preview of BLP7G07S-140P PDF
BLP7G07S-140P Datasheet Preview Page 2 BLP7G07S-140P Datasheet Preview Page 3

Datasheet Details

Part number:

BLP7G07S-140P

Manufacturer:

Ampleon

File Size:

339.82 KB

Description:

Power ldmos transistor.

📁 Related Datasheet

BLP7G22-05 LDMOS driver transistor (Ampleon)

BLP7G22-10 LDMOS driver transistor (Ampleon)

BLP7272 PN junction Si photocell (SHANGHAI BELLING)

BLP021N10 MOSFET (BELLING)

BLP023N10 MOSFET (BELLING)

BLP0240 Si PIN junction photodiode (SHANGHAI BELLING)

BLP02N08 MOSFET (BELLING)

BLP038N10GL MOSFET (BELLING)

TAGS

BLP7G07S-140P Power LDMOS transistor Ampleon

BLP7G07S-140P Distributor