BLS9G2735L-50 LDMOS S-band radar power transistor

Ampleon

Description

BLS9G2735L-50; BLS9G2735LS-50 LDMOS S-band radar power transistor Rev.1 * 6 October 2017 Product data sheet 1.Product profile 1.1 General.
Single ended 50 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

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Datasheet Specifications

Part number: BLS9G2735L-50
Manufacturer: Ampleon
File Size: 399.80 KB
Datasheet: BLS9G2735L-50-Ampleon.pdf
Description: LDMOS S-band radar power transistor

Features

* Single ended
* Small size
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to

Applications

* in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.7 to 3.5 32 45 12 48 1.2 Feat

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BLS9G2735L-50 LDMOS S-band radar power transistor Ampleon

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