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BLS9G2934L-400

LDMOS S-band radar power transistor

BLS9G2934L-400 Features

* Single ended

* Small size

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to

BLS9G2934L-400 General Description

Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.9 GHz to 3.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp D .

BLS9G2934L-400 Datasheet (613.13 KB)

Preview of BLS9G2934L-400 PDF

Datasheet Details

Part number:

BLS9G2934L-400

Manufacturer:

Ampleon

File Size:

613.13 KB

Description:

Ldmos s-band radar power transistor.
BLS9G2934L-400; BLS9G2934LS-400 LDMOS S-band radar power transistor Rev. 1

* 6 April 2017 Product data sheet 1. Product profile 1.1 General.

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BLS9G2934L-400 LDMOS S-band radar power transistor Ampleon

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