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BLS9G2934LS-400, BLS9G2934L-400 LDMOS S-band radar power transistor

BLS9G2934LS-400 Description

BLS9G2934L-400; BLS9G2934LS-400 LDMOS S-band radar power transistor Rev.1 * 6 April 2017 Product data sheet 1.Product profile 1.1 General.
Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

BLS9G2934LS-400 Features

* Single ended
* Small size
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to

BLS9G2934LS-400 Applications

* in the frequency range from 2.9 GHz to 3.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.9 to 3.4 32 400 12 43 1.2 Fea

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This datasheet PDF includes multiple part numbers: BLS9G2934LS-400, BLS9G2934L-400. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLS9G2934LS-400, BLS9G2934L-400
Manufacturer
Ampleon
File Size
613.13 KB
Datasheet
BLS9G2934L-400-Ampleon.pdf
Description
LDMOS S-band radar power transistor
Note
This datasheet PDF includes multiple part numbers: BLS9G2934LS-400, BLS9G2934L-400.
Please refer to the document for exact specifications by model.

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LDMOS S-band radar power transistor Ampleon
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