Description
BLS9G2934L-400; BLS9G2934LS-400 LDMOS S-band radar power transistor Rev.1 * 6 April 2017 Product data sheet 1.Product profile 1.1 General.
Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
Features
* Single ended
* Small size
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to
Applications
* in the frequency range from 2.9 GHz to 3.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal
f
VDS
PL(1dB)
Gp
D
(GHz)
(V) (W)
(dB)
(%)
pulsed RF
2.9 to 3.4
32 400
12 43
1.2 Fea
