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BLS9G2729LS-350 - LDMOS S-band radar power transistor

This page provides the datasheet information for the BLS9G2729LS-350, a member of the BLS9G2729L-350 LDMOS S-band radar power transistor family.

Datasheet Summary

Description

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operations.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLS9G2729LS-350
Manufacturer Ampleon
File Size 498.17 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS9G2729LS-350 Datasheet
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BLS9G2729L-350: BLS9G2729LS-350 LDMOS S-band radar power transistor Rev. 1 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.7 to 2.9 28 320 14 50 1.
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