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BLS9G2735LS-50

LDMOS S-band radar power transistor

BLS9G2735LS-50 Features

* Single ended

* Small size

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to

BLS9G2735LS-50 General Description

Single ended 50 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp D (.

BLS9G2735LS-50 Datasheet (399.80 KB)

Preview of BLS9G2735LS-50 PDF

Datasheet Details

Part number:

BLS9G2735LS-50

Manufacturer:

Ampleon

File Size:

399.80 KB

Description:

Ldmos s-band radar power transistor.
BLS9G2735L-50; BLS9G2735LS-50 LDMOS S-band radar power transistor Rev. 1

* 6 October 2017 Product data sheet 1. Product profile 1.1 General.

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BLS9G2735LS-50 LDMOS S-band radar power transistor Ampleon

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