Description
BLS9G2735L-50; BLS9G2735LS-50 LDMOS S-band radar power transistor Rev.1 * 6 October 2017 Product data sheet 1.Product profile 1.1 General.
Single ended 50 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
Features
* Single ended
* Small size
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to
Applications
* in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal
f
VDS
PL(1dB)
Gp
D
(GHz)
(V) (W)
(dB)
(%)
pulsed RF
2.7 to 3.5
32 45
12 48
1.2 Feat
