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NESG2030M04 SiGe HIGH FREQUENCY TRANSISTOR

NESG2030M04 Description

www.DataSheet4U.com NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR .
NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process.

NESG2030M04 Features

* SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTIO

NESG2030M04 Applications

* from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 μA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applicat

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Datasheet Details

Part number
NESG2030M04
Manufacturer
CEL
File Size
455.63 KB
Datasheet
NESG2030M04_CEL.pdf
Description
SiGe HIGH FREQUENCY TRANSISTOR

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SiGe HIGH FREQUENCY TRANSISTOR CEL
CEL NESG2030M04-like datasheet