CS140N08AR - Silicon N-Channel Power MOSFET
CS140N08 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor VDSS ID(Silicon limited current) ID(Package limited current) PD(TC=25℃) RDS(ON)Typ 85 1
CS140N08AR Features
* l Fast Switching l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:87.5nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(TJ= 25℃ unless otherwise specified): Symbol Pa