CS3N150FA9R Datasheet - CR Micro

CS3N150FA9R Silicon N-Channel Power MOSFET

CS3N150F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS3N150FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data: 37.6nC) l Low Reverse transfer capacitances(Typical:2.8 pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Pa

CS3N150FA9R-CRMicro.pdf