CS6N90A8R Datasheet - CR Micro

CS6N90A8R Silicon N-Channel Power MOSFET

CS6N90 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS6N90A8R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.3Ω) l Low Gate Charge (Typical Data: 31.1nC) l Low Reverse transfer capacitances(Typical:5.2 pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 900 V 6 A 133 W 1.85 Ω Applications： Power switch circuit of adaptor and c

CS6N90A8R-CRMicro.pdf