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CS6N90B4R-G Datasheet - CR Micro

CS6N90B4R-G Silicon N-Channel Power MOSFET

CS6N90 B4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS6N90B4R-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.5Ω)

* Low Gate Charge (Typical Data: 30.1nC)

* Low Reverse transfer capacitances(Typical:6.4pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（TJ

CS6N90B4R-G-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS6N90B4R-G

Manufacturer:

CR Micro

File Size:

588.25 KB

Description:

Silicon n-channel power mosfet.

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CS6N90B4R-G CS6N90B4R-G Silicon N-Channel Power MOSFET CR Micro

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