CS6N90B4R-G - Silicon N-Channel Power MOSFET
CS6N90 B4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS6N90B4R-G Features
* Fast Switching
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge (Typical Data: 30.1nC)
* Low Reverse transfer capacitances(Typical:6.4pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（TJ
