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CS6N90B4R-G Silicon N-Channel Power MOSFET

CS6N90B4R-G Description

Silicon N-Channel Power MOSFET ○R CS6N90 B4R-G General .
CS6N90 B4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improv.

CS6N90B4R-G Features

* Fast Switching
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge (Typical Data: 30.1nC)
* Low Reverse transfer capacitances(Typical:6.4pF)
* 100% Single Pulse avalanche energy Test

CS6N90B4R-G Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source

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