CS6N90ARH-G Datasheet - Huajing Microelectronics

CS6N90ARH-G Silicon N-Channel Power MOSFET

CS6N90 ARH-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS6N90ARH-G Features

* l Fast Switching l Low ON Resistance(Rdson≤2.3Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）

CS6N90ARH-G-HuajingMicroelectronics.pdf