CS6N90FA9R Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS6N90FA9R, Silicon N-Channel Power MOSFET

CS6N90F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS6N90FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.3Ω) l Low Gate Charge (Typical Data: 31.1nC) l Low Reverse transfer capacitances(Typical:5.2 pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Pa