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CS6N90A8H Datasheet - Huajing Microelectronics

CS6N90A8H Silicon N-Channel Power MOSFET

CS6N90 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS6N90A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤2.3Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test Applications： ATX Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS E

CS6N90A8H-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS6N90A8H

Manufacturer:

Huajing Microelectronics

File Size:

303.42 KB

Description:

Silicon n-channel power mosfet.

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