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CS82N25AKR-G Silicon N-Channel Power MOSFET

CS82N25AKR-G Description

Silicon N-Channel Power MOSFET ○R CS82N25 AKR-G General .
CS82N25 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS82N25AKR-G Features

* Fast Switching
* Low ON Resistance(Rdson≤35mΩ)
* Low Gate Charge (Typical Data: 148.5nC)
* Low Reverse transfer capacitances(Typical: 73.9pF)
* 100% Single Pulse avalanche energy Test

CS82N25AKR-G Applications

* Power switch circuit of electron ballast and adaptor. 250 V 82 A 250 W 25 mΩ Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-t

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Datasheet Details

Part number
CS82N25AKR-G
Manufacturer
CR Micro
File Size
832.76 KB
Datasheet
CS82N25AKR-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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