CS82N25AKR-G - Silicon N-Channel Power MOSFET
CS82N25 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor VDSS ID PD (TC=25℃) RDS(ON)Typ TO-247 can be used in various power switching
CS82N25AKR-G Features
* Fast Switching
* Low ON Resistance(Rdson≤35mΩ)
* Low Gate Charge (Typical Data: 148.5nC)
* Low Reverse transfer capacitances(Typical: 73.9pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： Power switch circuit of electron ballast and adaptor.
