CS8N90FA9D

Silicon N-Channel Power MOSFET

CR Micro

CS8N90FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:47nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VD

CS8N90FA9D General Description

CS8N90F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS8N90FA9D Datasheet (767.18 KB)

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Datasheet Details

Part number:

CS8N90FA9D

Manufacturer:

CR Micro

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767.18 KB

Description:

Silicon n-channel power mosfet.

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CS8N90FA9D Silicon N-Channel Power MOSFET CR Micro

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CS8N90FA9D Features

CS8N90FA9D General Description

Datasheet Details

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