CS8N90A8 Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS8N90A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS8N90A8 General Description

CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 900 8 130 1.2 switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS8N90A8 Datasheet (647.36 KB)

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CS8N90A8

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Huajing Microelectronics

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647.36 KB

Description:

Silicon n-channel power mosfet.

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CS8N90A8 Features

CS8N90A8 General Description

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