CS8N90FA9

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS8N90FA9 Features

* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS8N90FA9 General Description

CS8N90F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS8N90FA9 Datasheet (651.63 KB)

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Datasheet Details

Part number:

CS8N90FA9

Manufacturer:

Huajing Microelectronics

File Size:

651.63 KB

Description:

Silicon n-channel power mosfet.

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CS8N90FA9 Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS8N90FA9 Features

CS8N90FA9 General Description

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