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CS100N06D3-G Silicon N-Channel Power Trench MOSFET

CS100N06D3-G Description

Silicon N-Channel Power Trench MOSFET ○R CS100N06 D3-G General .
CS100N06 D3-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improv.

CS100N06D3-G Features

* Fast Switching
* Low ON Resistance (Rdson≤10mΩ)
* Low Gate Charge (Typical Data: 88.8nC)
* Low Reverse transfer capacitances(Typical:220pF)
* 100% Single Pulse avalanche energy Test

CS100N06D3-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avala

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Datasheet Details

Part number
CS100N06D3-G
Manufacturer
CR Micro
File Size
1.68 MB
Datasheet
CS100N06D3-G-CRMicro.pdf
Description
Silicon N-Channel Power Trench MOSFET

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Silicon N-Channel Power Trench MOSFET CR Micro
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