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CS9N20FA9R Silicon N-Channel Power MOSFET

CS9N20FA9R Description

Silicon N-Channel Power MOSFET ○R CS9N20F A9R General .
CS9N20F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS9N20FA9R Features

* Fast Switching
* Low ON Resistance(Rdson≤0.28Ω)
* Low Gate Charge (Typical Data: 12.6nC)
* Low Reverse transfer capacitances(Typical: 8.8pF)

CS9N20FA9R Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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Datasheet Details

Part number
CS9N20FA9R
Manufacturer
CR Micro
File Size
617.47 KB
Datasheet
CS9N20FA9R-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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