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MTB030N10RE3 N-Channel Enhancement Mode Power MOSFET

MTB030N10RE3 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB030N10RE3 Spec.No.: C053E3 Issued Date : 2016.08.26 Revised Date : Page No.: .

MTB030N10RE3 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) 30.8 mΩ(typ)

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Datasheet Details

Part number
MTB030N10RE3
Manufacturer
CYStech Electronics
File Size
347.28 KB
Datasheet
MTB030N10RE3-CYStechElectronics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech Electronics
CYStech Electronics MTB030N10RE3-like datasheet