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MTB030P06KH8 P-Channel Enhancement Mode Power MOSFET

MTB030P06KH8 Description

CYStech Electronics Corp.Spec.No.: C104H8 Issued Date : 2016.04.29 Revised Date : Page No.: 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P.

MTB030P06KH8 Features

* RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 3

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Datasheet Details

Part number
MTB030P06KH8
Manufacturer
CYStech Electronics
File Size
569.58 KB
Datasheet
MTB030P06KH8-CYStechElectronics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech Electronics
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