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MTP2311N3 -60V P-CHANNEL Enhancement Mode MOSFET

MTP2311N3 Description

CYStech Electronics Corp.-60V P-CHANNEL Enhancement Mode MOSFET Spec.No.: C733N3 Issued Date : 2011.12.27 Revised Date : Page No.: 1/8 MTP2311N3.

MTP2311N3 Features

* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.5A 72mΩ(typ

MTP2311N3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2311N3 CYStek Product Specification

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Datasheet Details

Part number
MTP2311N3
Manufacturer
CYStech Electronics
File Size
353.12 KB
Datasheet
MTP2311N3-CYStechElectronics.pdf
Description
-60V P-CHANNEL Enhancement Mode MOSFET

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-60V P-CHANNEL Enhancement Mode MOSFET CYStech Electronics
CYStech Electronics MTP2311N3-like datasheet