CGH55015F1 GaN HEMT

Cree

Description

CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transis.
CAP, 1.

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Datasheet Specifications

Part number: CGH55015F1
Manufacturer: Cree
File Size: 969.56 KB
Datasheet: CGH55015F1-Cree.pdf
Description: GaN HEMT

Features

* 5.5 - 5.8 GHz Operation
* 15 W Peak Power Capability
* >10.5 dB Small Signal Gain
* 2 W PAVE < 2.0 % EVM
* 25 % Efficiency at 2 W Average Power

Applications

* The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616 Typical Performance 5.5-5.8GHz (TC

CGH55015F1 Distributors

📁 Related Datasheet

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CGH55015F1 GaN HEMT Cree

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