CGH55015F1 Datasheet (Cree)

CGH55015F1, GaN HEMT

CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S CAP, 18pF, +/-5%, 0603, ATC 600S CAP, 39pF +/-5%, 0603, ATC 600S CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 CAP, 10UF, 16V, SMT, TANTALUM CAP, 1.0UF ±

CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications.

The transistor is available in both screw-down, flange and solder-down, pill packages.

Based on appropriate external match adjustment, the CGH55015F1/CG

CGH55015F1 Features

* 5.5 - 5.8 GHz Operation

* 15 W Peak Power Capability

* >10.5 dB Small Signal Gain

* 2 W PAVE < 2.0 % EVM

* 25 % Efficiency at 2 W Average Power

* Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications

* Designed for Multi-carrie