CGH55030P1 Datasheet, Hemt, Cree

CGH55030P1 Features

• Hemt
• 300 MHz Instantaneous Bandwidth
• 30 W Peak Power Capability
• 10 dB Small Signal Gain
• 4 W PAVE < 2.0 % EVM
• 25 % Efficiency at 4 W Ave

PDF File Details

Part number:

CGH55030P1

Manufacturer:

Cree

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679.68kb

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📄 Datasheet

Description:

Gan hemt. RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.6 OHMS CAP, 0.3pF, +/-0.05pF, 0402, ATC600L CAP, 33 UF, 20%, G CASE CAP, 1.0U

CGH55030P1 Application

• Applications The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment,

TAGS

CGH55030P1

Cree

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