CGH55030F1 GaN HEMT

Cree

Description

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility t.
RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.

📥 Download Datasheet

CGH55030F1 Datasheet Preview — Preview of CGH55030F1 PDF

Datasheet Specifications

Part number: CGH55030F1
Manufacturer: Cree
File Size: 679.68 KB
Datasheet: CGH55030F1-Cree.pdf
Description: GaN HEMT

Features

* 300 MHz Instantaneous Bandwidth
* 30 W Peak Power Capability
* 10 dB Small Signal Gain
* 4 W PAVE < 2.0 % EVM
* 25 % Efficiency at 4 W Average Power

Applications

* The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616 Typical Performance Over 5.5-5.8

CGH55030F1 Distributors

📁 Related Datasheet

CGH55015F2 CGH55015P2 CGH09120F CGH21120F CGH21240F CGH27015

📌 All Tags

CGH55030F1 GaN HEMT Cree

Cree CGH55030F1-like datasheet