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CY7C1150KV18, CY7C1148KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture

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Description

CY7C1148KV18/CY7C1150KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit DDR II+ SRAM Two-Word Burst Architecture .

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This datasheet PDF includes multiple part numbers: CY7C1150KV18, CY7C1148KV18. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
CY7C1150KV18, CY7C1148KV18
Manufacturer
Cypress Semiconductor
File Size
610.31 KB
Datasheet
CY7C1148KV18-CypressSemiconductor.pdf
Description
18-Mbit DDR II+ SRAM Two-Word Burst Architecture
Note
This datasheet PDF includes multiple part numbers: CY7C1150KV18, CY7C1148KV18.
Please refer to the document for exact specifications by model.

Features

* 18-Mbit density (1M × 18, 512K × 36)
* 450-MHz clock for high bandwidth
* Two-word burst for reducing address bus frequency
* Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz
* Available in 2.0 clock cycle latency
* Two input clocks (K and K) for p

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