CY7C1526V18, CY7C1511V18 Datasheet - Cypress Semiconductor

CY7C1526V18 (CY7C15xxV18) SRAM 4-Word Burst Architecture

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port ha.

CY7C1526V18 Features

* Separate Independent Read and Write Data Ports

* Supports concurrent transactions

* 250-MHz Clock for High Bandwidth

* 4-Word Burst for reducing address bus frequency

* Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 M

CY7C1511V18_CypressSemiconductor.pdf

CY7C1526V18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C1526V18, CY7C1511V18. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY7C1526V18, CY7C1511V18

Manufacturer:

Cypress Semiconductor

File Size:

561.73 KB

Description:

(cy7c15xxv18) sram 4-word burst architecture.

Note:

This datasheet PDF includes multiple part numbers: CY7C1526V18, CY7C1511V18.
Please refer to the document for exact specifications by model.

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TAGS

CY7C1526V18 CY7C1511V18 CY7C15xxV18 SRAM 4-Word Burst Architecture Cypress Semiconductor

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