CY7C1916KV18 Datasheet - Cypress Semiconductor

CY7C1916KV18 18-Mbit DDR II SRAM Two-Word Burst Architecture

The CY7C1316KV18, CY7C1916KV18, CY7C1318KV18, and CY7C1320KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate r.

CY7C1916KV18 Features

* Configurations CY7C1316KV18

* 2 M × 8 CY7C1916KV18

* 2 M × 9 CY7C1318KV18

* 1 M × 18 CY7C1320KV18

* 512 K × 36 18-Mbit density (2 M × 8, 2 M × 9, 1 M × 18, 512 K × 36) 333-MHz clock for high bandwidth Two-word burst for reducing address

CY7C1916KV18 Datasheet (1.45 MB)

CY7C1916KV18 Datasheet Preview — Preview of CY7C1916KV18 PDF

Datasheet Details

Part number:

CY7C1916KV18

Manufacturer:

Cypress Semiconductor

File Size:

1.45 MB

Description:

18-mbit ddr ii sram two-word burst architecture.

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CY7C1916KV18 18-Mbit DDR SRAM Two-Word Burst Architecture Cypress Semiconductor

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