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MTB100N10RKJ3 - N-Channel Enhancement Mode Power MOSFET

MTB100N10RKJ3 Description

CYStech Electronics Corp.N -Channel Enhancement Mode Power MOSFET MTB100N10RKJ3 Spec.No.: C059J3 Issued Date : 2016.09.01 Revised Date : Page No..

MTB100N10RKJ3 Features

* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPA

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Datasheet Details

Part number
MTB100N10RKJ3
Manufacturer
Cystech Electonics
File Size
348.08 KB
Datasheet
MTB100N10RKJ3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB100N10RKJ3-like datasheet