Datasheet4U Logo Datasheet4U.com

MTBH0N25L3 N-Channel Enhancement Mode Power MOSFET

MTBH0N25L3 Description

CYStech Electronics Corp.Spec.No.: C895L3 Issued Date : 2016.11.26 Revised Date : Page No.: 1/9 N-Channel Enhancement Mode MOSFET MTBH0N25L3 Fea.

MTBH0N25L3 Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ. ) 732mΩ (typ. ) Equivalent Circuit MTBH0N25L3 G：Gate D：Drain S：Source Outline SOT-223 D S

📥 Download Datasheet

Preview of MTBH0N25L3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTBH0N25L3
Manufacturer
Cystech Electonics
File Size
392.82 KB
Datasheet
MTBH0N25L3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
  • MTB-F000329MNHNAA-B - LCD Module (Microtips)
  • MTB-F000368MNHNAA - LCD Module (Microtips)
  • MTB001 - High Output Interface Driver ICs (Shindengen Electric)
  • MTB001D01-1 - LCD Module (CSOT)
  • MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010N06I3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTBH0N25L3-like datasheet