* low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications
* Power Management Functions
* DC-DC Converters Features
* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient packa
DMN10H100SK3 Datasheet (457.85 KB)
DMN10H100SK3
457.85 KB
N-channel mosfet.
NEW PNREOWDPURCOTDUCT
DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) max
80mΩ @ VGS = 10V 100mΩ @ VGS = 4..
📁 Related Datasheet
DMN10H100SK3 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
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DMN10H120SE - N-Channel MOSFET
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A D V A N C E E DN IENWF OPRR OMDA TUICOTN
Product Summary
V(BR)DSS 100V
RDS(ON) max
110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.6A
3.
DMN10H120SFG - N-Channel MOSFET
(Diodes)
ADVANCE INFORMATION
Product Summary
V(BR)DSS 100V
RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.8 A
3.6 A
Description
This.
DMN10H170SFDE - N-Channel MOSFET
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ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
Product Summary
V(BR)DSS 100V
RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.6A
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DMN10H170SFG - N-Channel MOSFET
(Diodes)
NEW PRODUCT
Product Summary
V(BR)DSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.7A
Description
This MOSFET ha.
DMN10H170SFGQ - N-CHANNEL MOSFET
(DIODES)
DMN10H170SFGQ
N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
Features
BVDSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V.
DMN10H170SK3 - N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN10H170SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) Max
140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V
ID.
DMN10H170SVT - N-Channel MOSFET
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ADVANCED INNEFWORPRMOADTIUOCNT
DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) max
160mΩ @ VGS = 10V 200mΩ @ .
