Datasheet Specifications
- Part number
- DMN3112S
- Manufacturer
- DIODES ↗
- File Size
- 241.46 KB
- Datasheet
- DMN3112S_Diodes.pdf
- Description
- N-Channel MOSFET
Description
DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database..
Features
* Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT-23 MechanicalApplications
* shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systDMN3112S Distributors
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