Part number:
DMN3112SSS
Manufacturer:
File Size:
249.94 KB
Description:
Single n-channel mosfet.
DMN3112SSS Datasheet (249.94 KB)
* Low On-Resistance
* 57mΩ @ VGS = 10V
* 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
DMN3112SSS Datasheet (249.94 KB)
DMN3112SSS
249.94 KB
Single n-channel mosfet.
📁 Related Datasheet
DMN3112S - N-Channel MOSFET
(Diodes)
DMN3112S
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
• Low On-Resistance.
DMN3112S - N-Channel MOSFET
(TY Semiconductor)
Product specification
DMN3112S
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshol.
DMN3110S - N-Channel MOSFET
(Diodes)
DMN3110S
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max 73mΩ @ VGS = 10V 110mΩ @ VGS = 4.5V
ID max TA = +25°C
3.3A
2.7.
DMN3115UDM - N-Channel MOSFET
(Diodes)
DMN3115UDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(on) max
60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V
ID TA.
DMN3135LVT - Dual N-Channel MOSFET
(Diodes)
ADVANCE INFORMATION
DMN3135LVT
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(on)
60mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V.
DMN313DLT - N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN313DLT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) 2Ω @ VGS = 4V 3.2Ω @ VGS = 2.5V
ID TA = 25°C
270mA
2.
DMN3150L - N-Channel MOSFET
(Diodes)
DMN3150L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance: RDS(ON) < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V .
DMN3150LW - N-Channel MOSFET
(Diodes)
DMN3150LW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
• Low On-Resistanc.
