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DMN313DLT N-Channel MOSFET

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Description

NEW PRODUCT DMN313DLT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 2Ω @ VGS = 4V 3.2Ω @ VGS = 2.5V ID TA = 25°C 270mA 2.
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform.

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Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Lead Free By Design/RoHS Compliant (Note 1)
* ESD Protected up to 2kV
* "Green" Device (Note 2)
* Qualified to AEC-Q101 Standards for High R

Applications

* This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Backlighting
* DC-DC Converters
* Power management functions Featur

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