* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Lead Free By Design/RoHS Compliant (Note 1)
* ESD Protected up to 2kV
* "Green" Device (Note 2)
* Qualified to AEC-Q101 Standards for High R
DMN313DLT Datasheet (129.32 KB)
DMN313DLT
129.32 KB
N-channel mosfet.
NEW PRODUCT
DMN313DLT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) 2Ω @ VGS = 4V 3.2Ω @ VGS = 2.5V
ID TA = 25°C
270mA
2.
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