DMN31D5UDW Dual N-Channel MOSFET

DIODES

Description

DMN31D5UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 1.5Ω @ VGS = 4.5V 2.0Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V 4.5Ω .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMN31D5UDW
Manufacturer: DIODES ↗
File Size: 712.83 KB
Datasheet: DMN31D5UDW-DIODES.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface-Mount Package
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Gr

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DMN31D5UDW Dual N-Channel MOSFET DIODES

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