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DMN31D5UFZ

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN31D5UFZ Features

* Low Package Profile, 0.42mm Maximum Package Height

* 0.62mm x 0.62mm Package Footprint

* Low On-Resistance

* Very Low Gate Threshold Voltage, 1.0V max

* ESD Protected Gate

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and

DMN31D5UFZ General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications

* General Purpose Interfacing Switch

* Power Management Functions

* An.

DMN31D5UFZ Datasheet (331.41 KB)

Preview of DMN31D5UFZ PDF

Datasheet Details

Part number:

DMN31D5UFZ

Manufacturer:

DIODES ↗

File Size:

331.41 KB

Description:

N-channel enhancement mode mosfet.
A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 1.5Ω @ VGS = 4..

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DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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