DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

Description

A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 1.5Ω @ VGS = 4..
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high.

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Datasheet Specifications

Part number: DMN31D5UFZ
Manufacturer: DIODES ↗
File Size: 331.41 KB
Datasheet: DMN31D5UFZ-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low Package Profile, 0.42mm Maximum Package Height
* 0.62mm x 0.62mm Package Footprint
* Low On-Resistance
* Very Low Gate Threshold Voltage, 1.0V max
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and

Applications

* Applications
* General Purpose Interfacing Switch
* Power Management Functions

DMN31D5UFZ Distributors

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DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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