DMN3190LDWQ Dual N-CHANNEL MOSFET

DIODES

Description

DMN3190LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) (MAX) 190mΩ @ VGS = 10V 335mΩ @ VGS = 4.5V ID (MAX) TA = +25°.
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number: DMN3190LDWQ
Manufacturer: DIODES ↗
File Size: 487.34 KB
Datasheet: DMN3190LDWQ-DIODES.pdf
Description: Dual N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability
* PPAP Capable

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Motor Control
* DC-DC Converters

DMN3190LDWQ Distributors

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DMN3190LDWQ Dual N-CHANNEL MOSFET DIODES

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