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DMN3115UDM N-Channel MOSFET

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Description

DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V ID TA.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it i.

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Features

* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* ESD Protected Gate
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards fo

Applications

* Applications
* General Purpose Interfacing Switch

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