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PTB20156 8 Watts/ 1350-1850 MHz Microwave Power Transistor

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Description

e PTB 20156 8 Watts, 1350 *1850 MHz Microwave Power Transistor .
The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz.

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Datasheet Specifications

Part number
PTB20156
Manufacturer
Ericsson
File Size
43.92 KB
Datasheet
PTB20156_Ericsson.pdf
Description
8 Watts/ 1350-1850 MHz Microwave Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride Pas

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