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PTB20157 - 20 Watts/ 1.35-1.85 GHz RF Power Transistor

PTB20157 Description

e PTB 20157 20 Watts, 1.35 *1.85 GHz RF Power Transistor .
The 20157 is an NPN common base RF power transistor intended for 22. 26 Vdc class C operation from 1.

PTB20157 Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 20 Watts, 1.35
* 1.85 GHz Class C Characteristics 40% Min Collector Efficiency at 20 Watts Gold Metallization Silicon Nitride Pa

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Datasheet Details

Part number
PTB20157
Manufacturer
Ericsson
File Size
45.51 KB
Datasheet
PTB20157_Ericsson.pdf
Description
20 Watts/ 1.35-1.85 GHz RF Power Transistor

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Watts 1.35-1.85 GHz Power Transistor Ericsson
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