FDD850N10L - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDD850N10L
Manufacturer	Fairchild Semiconductor
File Size	695.94 KB
Description	MOSFET
Datasheet	FDD850N10L-FairchildSemiconductor.pdf

FDD850N10L Product details

Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Consumer Appliances LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D G S D D-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.S Symbol VDSS VGSS ID IDM EAS dv/dt PD Para

Features

RDS(on) = 61 mΩ ( yp. ) @ VGS = 10 V, ID = 12 A.
RDS(on) = 64 mΩ (Typ. ) @ VGS = 5 V, ID = 12 A.
Low Gate Charge (Typ. 22.2 nC).
Low Crss (Typ. 42 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant.

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Published: Jan 11, 2017 |