FDD850N10L Datasheet, Mosfet, Fairchild Semiconductor

FDD850N10L Features

• Mosfet
• RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A
• RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A
• Low Gate Charge (Typ. 22.2 nC)
• Low Crss (Typ. 42 pF)

PDF File Details

Part number:

FDD850N10L

Manufacturer:

Fairchild Semiconductor

File Size:

695.94kb

Download:

📄 Datasheet

Description:

Mosfet. This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the

TAGS

FDD850N10L

Fairchild Semiconductor

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