FDD850N10LD

N-Channel PowerTrench MOSFET + Diode

Fairchild Semiconductor

FDD850N10LD Features

* RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A

* RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A

* Low Gate Charge (Typ. 22.2 nC)

* Low Crss (Typ. 42 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS Comp

FDD850N10LD General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. A.

FDD850N10LD Datasheet (778.71 KB)

FDD850N10LD Datasheet Preview — Preview of FDD850N10LD PDF

Datasheet Details

Part number:

FDD850N10LD

Manufacturer:

Fairchild Semiconductor

File Size:

778.71 KB

Description:

N-channel powertrench mosfet + diode.
FDD850N10LD

* BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD850N10LD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100.

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FDD850N10LD N-Channel PowerTrench MOSFET Diode Fairchild Semiconductor

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FDD850N10LD Features

FDD850N10LD General Description

Datasheet Details

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