FDD8586 Datasheet - Fairchild Semiconductor

N-Channel PowerTrench MOSFET

FDD8586 General Description

* Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A * Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A * Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V * Low gate resistance * 100% Avalanche tested * RoHS compliant * Vcore DC-DC for Desktop Computers and .

FDD8586 Datasheet (406.15 KB)

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FDD8586

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Fairchild Semiconductor

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406.15 KB

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N-channel powertrench mosfet.
www.DataSheet4U.com FDD8586/FDU8586 N-Channel PowerTrench® MOSFET January 2007 FDD8586/FDU8586 N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mΩ Featur.

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FDD8586 N-Channel PowerTrench MOSFET Fairchild Semiconductor

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FDD8586 General Description

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