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FDD8580 - N-Channel MOSFET

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FDD8580 Product details

Description

Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switchin

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