FDMS3672 N-Channel UltraFET Trench MOSFET

Fairchild Semiconductor

Description

FDMS3672 N-Channel UltraFET Trench MOSFET February 2007 FDMS3672 N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ .
Max rDS(on) = 23mΩ at VGS = 10V, ID = 7. Max rDS(on) = 29mΩ at VGS = 6V, ID = 6. Typ Qg = 31nC at VGS = 10V.

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Datasheet Specifications

Part number: FDMS3672
Manufacturer: Fairchild Semiconductor
File Size: 280.57 KB
Datasheet: FDMS3672_FairchildSemiconductor.pdf
Description: N-Channel UltraFET Trench MOSFET

Applications

* Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application
* DC - DC Conversion Pin 1 S S S G D D www. DataSheet4U. com 5 6 7 8 4 G 3 S 2 S 1 S D D D D D D Power (Bottom view) MOSFET Maximum Rat

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FDMS3672 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMS3672-like datasheet